Sung-hao's Resume

Sung-hao

Technical Support Engineer

Taichung City

Nationality

Summary

Skills Summary Solaris System: Extensive experience with Solaris operating systems, including installation, configuration, and maintenance. Proficient in managing Solaris servers and optimizing system performance. Linux System: Advanced knowledge of various Linux distributions (e.g., Red Hat, Ubuntu, CentOS). Skilled in system administration, shell scripting, and network configuration. VMware: Expertise in VMware virtualization technologies, including vSphere, ESXi, and vCenter. Capable of deploying and managing virtual machines, performing migrations, and ensuring high availability. ASML Yieldstar Platform: ASML measurement platform, specialized in whole system mantainance Deep Ultraviolet (DUV) illumination and projection Skilled in the troubleshoot and analysis problem of illumination projection techniques in ASML DUV TWIINSCAN.

Work experience

Technical Support Engineer
艾司摩爾股份有限公司
2015.05-Current
(11 years)
Specialist on ASML product : TWINSCAN / LCP Software 1. Software related issue of product on Unix/Linux, Windows. 2. Mange software upgrade, virtual machine maintenance / monitoring and SECS diagnosis. 3 Develop and customized FAB atuomations YIELDSTAR - metorlogy for overlay/critical dimention. 1. Specialized in mechnism, optical, electronic and software 2. Help to customer maintain tool availibity rate. 3. Part life cycle estimation and prediction to keep machine living and work. Show less
Upgrade Coordinator
艾司摩爾
2015.05-2019.12
(5 years)
Machine upgrade coordinator Have wide machine concept to perform upgrade coordination, including DUV scanner- XT, NXT and Metrology platform -Yieldstar. Achievement: Cost reduction- reduce upgrade cycle time 28% in average Manpower utility maximize – reduce 17% manpower labor hours without suffering cycle time. Quality improvement – reduce material defect rate in FAB up to 32% by reporting in time and specifically , provide indication rear end supporting. Leadership– introduce and indicate way of working and skills to different teams in different countries, including Japan, Korea and the U.S. Show less

Educational experience

國立臺灣大學
碩士, Electrical, Electronic and Communications Engineering Technology/Technician
Considering the high electron mobility of InAs, and the dimentional advantage of nanowire, to fabricate InAs nanowire into transistor is a next generation divece choise. To achieve this goal, the InAs nanowire is fomed by MBE epitaxy method, and the structure of MOSFET fabration, we specific focus on the ohme contact and the dielectric layer. To form high quality ohme contact on InAs nanowire, we introduded to use Focus Ion Bean with Ga ion to etched the native oxide layer then deposit metod in situ. To form high quality layer, we also have to remove native oxide layer on the InAs nanowire, therefor, we applied Atomic Layer Depoisiton with Plasma, to etch the native oxide layer by plasma, and then deposit Al2O3, to form dielectric layer.
國立雲林科技大學
學士, Electrical, Electronic and Communications Engineering Technology/Technician